F2001, F2002, F2003T Selling Leads, Datasheet
MFG:POLYFET Package Cooled:TO-63S D/C:98+
F2001, F2002, F2003T Datasheet download
Part Number: F2001
MFG: POLYFET
Package Cooled: TO-63S
D/C: 98+
MFG:POLYFET Package Cooled:TO-63S D/C:98+
F2001, F2002, F2003T Datasheet download
MFG: POLYFET
Package Cooled: TO-63S
D/C: 98+
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PDF/DataSheet Download
Datasheet: F2001
File Size: 38768 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: F2002
File Size: 38818 KB
Manufacturer: POLYFET [Polyfet RF Devices]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: F2000D
File Size: 217154 KB
Manufacturer: OSRAM [OSRAM GmbH]
Download : Click here to Download
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.
Total Device Dissipation |
Junction to Case Thermal |
Maximum Junction Resistance |
Storage Temperature |
DC Drain Current Temperature |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
20Watts | 10/W | 200 | -65 to 150 | 0.8 A | 70V | 70V | 30V |
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high FT enhance broadband performance.
Total Device Dissipation |
Junction to Case Thermal |
Maximum Junction Resistance |
Storage Temperature |
DC Drain Current Temperature |
Drain to Gate Voltage |
Drain to Source Voltage |
Gate to Source Voltage |
30Watts | 6/W | 200 | -65 to 150 | 1.6 A | 70V | 70V | 30V |