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Maximum average forward rectified current at TL=125°C
I(AV)
1.0
Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C
IR
5.0 50.0
A
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RQJA RQJL
85.0 30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C
NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied VR=4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
EGF1A Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Ideal for surface mount automotive applications · High temperature metallurgically bonded construction · Superfast recovery times for high efficiency · Glass passivated cavity-free junction · Built-in strain relief · Easy pick and place · High temperature soldering guaranteed: 450°C/5 seconds at terminals · Complete device submersible temperature of 265°C for 10 seconds in solder bath
EGF1B Parameters
Technical/Catalog Information
EGF1B
Vendor
Fairchild Semiconductor (VA)
Category
Discrete Semiconductor Products
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
100V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1V @ 1A
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
10A @ 100V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Packaging
Cut Tape (CT)
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
EGF1B EGF1B EGF1BCT ND EGF1BCTND EGF1BCT
EGF1B General Description
EGF1A thru EGF1D datasheet
EGF1D Parameters
Technical/Catalog Information
EGF1D
Vendor
Fairchild Semiconductor
Category
Discrete Semiconductor Products
Diode Type
Standard
Voltage - DC Reverse (Vr) (Max)
200V
Current - Average Rectified (Io)
1A
Voltage - Forward (Vf) (Max) @ If
1V @ 1A
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
10A @ 200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AC, SMA
Packaging
Tape & Reel (TR)
Capacitance @ Vr, F
15pF @ 4V, 1MHz
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
EGF1D EGF1D
EGF1D General Description
EGF1A thru EGF1D datasheet
EGF1D Maximum Ratings
SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts
Maximum average forward rectified current at TL=125°C
I(AV)
1.0
Amps
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current TA=25°C at rated DC blocking voltage TA=125°C
IR
5.0 50.0
A
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RQJA RQJL
85.0 30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C
NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A (2) Measured at 1.0 MHz and applied VR=4.0 Volts (3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas
EGF1D Features
· Plastic package has Underwriters Laboratory Flammability Classification 94V-0 · Ideal for surface mount automotive applications · High temperature metallurgically bonded construction · Superfast recovery times for high efficiency · Glass passivated cavity-free junction · Built-in strain relief · Easy pick and place · High temperature soldering guaranteed: 450°C/5 seconds at terminals · Complete device submersible temperature of 265°C for 10 seconds in solder bath