EGF10D, EGF10G, EGF10J Selling Leads, Datasheet
MFG:ZOWIE Package Cooled:DO-214AC D/C:09+
EGF10D, EGF10G, EGF10J Datasheet download
Part Number: EGF10D
MFG: ZOWIE
Package Cooled: DO-214AC
D/C: 09+
MFG:ZOWIE Package Cooled:DO-214AC D/C:09+
EGF10D, EGF10G, EGF10J Datasheet download
MFG: ZOWIE
Package Cooled: DO-214AC
D/C: 09+
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Datasheet: EGF10D
File Size: 66321 KB
Manufacturer: ZOWIE [Zowie Technology Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: EGF10G
File Size: 66321 KB
Manufacturer: ZOWIE [Zowie Technology Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: EGF10J
File Size: 66321 KB
Manufacturer: ZOWIE [Zowie Technology Corporation]
Download : Click here to Download
Ratings at 25 oC ambient temperature unless otherwise specified. |
SYMBOLS |
EGF10 |
UNITS | |||||||
A |
B |
D |
F |
G |
J |
K |
M | |||
Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
Volts |
Maximum average forward rectified current at TA=75oC |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
Maximum DC blocking voltage |
I (AV) |
1.0
|
Volts | |||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
30
|
25
|
Amps | ||||||
Maximum instantaneous forward voltage at 1.0 A |
VF |
1.0
|
1.25 |
1.7
|
Amps | |||||
Maximum DC reverse currentTA=25oC at rated DC blocking voltageTA=125oC TA=150oC |
IR |
5
30 50 |
5
50 - |
uA | ||||||
Maximum reverse recovery time (NOTE 1) |
trr |
50
|
75
|
nS | ||||||
Typical junction capacitance (NOTE 2) |
CJ |
15
|
pF | |||||||
Typical thermal resistance (NOTE 3) |
R JA R JL |
75
25 |
oC / W | |||||||
Operating junction and storage temperature range |
TJ,TSTG |
-65 to +175
|
-55 to +150
|
oC |
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2"
(5.0x 5.0mm) copper pad areas.
Ratings at 25 oC ambient temperature unless otherwise specified. |
SYMBOLS |
EGF10 |
UNITS | |||||||
A |
B |
D |
F |
G |
J |
K |
M | |||
Maximum repetitive peak reverse voltage |
VRRM |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
Maximum RMS voltage |
VRMS |
35 |
70 |
140 |
210 |
280 |
420 |
560 |
700 |
Volts |
Maximum average forward rectified current at TA=75oC |
VDC |
50 |
100 |
200 |
300 |
400 |
600 |
800 |
1000 |
Volts |
Maximum DC blocking voltage |
I (AV) |
1.0
|
Volts | |||||||
Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) |
IFSM |
30
|
25
|
Amps | ||||||
Maximum instantaneous forward voltage at 1.0 A |
VF |
1.0
|
1.25 |
1.7
|
Amps | |||||
Maximum DC reverse currentTA=25oC at rated DC blocking voltageTA=125oC TA=150oC |
IR |
5
30 50 |
5
50 - |
uA | ||||||
Maximum reverse recovery time (NOTE 1) |
trr |
50
|
75
|
nS | ||||||
Typical junction capacitance (NOTE 2) |
CJ |
15
|
pF | |||||||
Typical thermal resistance (NOTE 3) |
R JA R JL |
75
25 |
oC / W | |||||||
Operating junction and storage temperature range |
TJ,TSTG |
-65 to +175
|
-55 to +150
|
oC |
NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A
(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2"
(5.0x 5.0mm) copper pad areas.