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EGF1D

Rectifiers 1.0a Rectifier UF Recovery

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SeekIC No. : 00169498 Detail

EGF1D: Rectifiers 1.0a Rectifier UF Recovery

EGF1D Data Sheet

floor Price/Ceiling Price

US $ .12~.18 / Piece | Get Latest Price
Part Number:
EGF1D
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.18
  • $.17
  • $.15
  • $.12
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Product : Ultra Fast Recovery Rectifiers Configuration : Single
Reverse Voltage : 200 V Forward Voltage Drop : 1 V
Recovery Time : 50 ns Forward Continuous Current : 1 A
Max Surge Current : 30 A Reverse Current IR : 10 uA
Mounting Style : SMD/SMT Package / Case : SMA
Packaging : Reel    

Description

Product : Ultra Fast Recovery Rectifiers
Mounting Style : SMD/SMT
Forward Continuous Current : 1 A
Max Surge Current : 30 A
Packaging : Reel
Configuration : Single
Reverse Voltage : 200 V
Reverse Current IR : 10 uA
Recovery Time : 50 ns
Forward Voltage Drop : 1 V
Package / Case : SMA


Features:

· Plastic package has Underwriters Laboratory Flammability Classification 94V-0
· Ideal for surface mount automotive applications
· High temperature metallurgically bonded construction
· Superfast recovery times for high efficiency
· Glass passivated cavity-free junction
· Built-in strain relief
· Easy pick and place
· High temperature soldering guaranteed: 450°C/5 seconds at terminals
· Complete device submersible temperature of 265°C for 10 seconds in solder bath




Specifications
SYMBOLS
EGF1A
EGF1B
EGF1C
EGF1D
UNITS
Device Marking Code
EA
EB
EC
ED
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts

Maximum average forward rectified current
at TL=125°C
I(AV)
1.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30.0
Amps
Maximum instantaneous forward voltage at 1.0A
VF
1.0
Volts
Maximum DC reverse current TA=25°C
at rated DC blocking voltage TA=125°C
IR
5.0
50.0
A
Typical reverse recovery time (NOTE 1)
trr
50.0
ns
Typical junction capacitance (NOTE 2)
CJ
15.0
pF
Typical thermal resistance (NOTE 3)
RQJA
RQJL
85.0
30.0
°C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
°C

NOTES:
(1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Measured at 1.0 MHz and applied VR=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas






Description

EGF1A thru EGF1D datasheet




Parameters:

Technical/Catalog InformationEGF1D
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Diode Type Standard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1V @ 1A
Reverse Recovery Time (trr)50ns
Current - Reverse Leakage @ Vr10A @ 200V
SpeedFast Recovery =< 500ns, > 200mA (Io)
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
PackagingTape & Reel (TR)
Capacitance @ Vr, F15pF @ 4V, 1MHz
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names EGF1D
EGF1D



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