EFA072A, EFA080A, EFA080A-70 Selling Leads, Datasheet
MFG:EXCELICS Package Cooled:N/A D/C:N/A
EFA072A, EFA080A, EFA080A-70 Datasheet download
Part Number: EFA072A
MFG: EXCELICS
Package Cooled: N/A
D/C: N/A
EFA072A, EFA080A, EFA080A-70
- Table of contents:
Info of EFA072A
Info of EFA080A
Info of EFA080A-70
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About EFA072A
PDF/DataSheet Download
Datasheet: EFA072A
File Size: 44681 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About EFA080A-100F
PDF/DataSheet Download
Datasheet: EFA080A-100F
File Size: 34226 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About EFA080A-70
PDF/DataSheet Download
Datasheet: EFA080A-70
File Size: 26315 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
EFA072A Maximum Ratings
|
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
|
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
12V -8V Idss 20mA 25dBm 175oC -65/175oC 2.5 W |
8V -4V 260Ma 4mA @ 3dB Compression 150oC -65/150oC 2.1 W |
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2 . Exceeding any of the above ratings may reduce MTTF below design goals.
EFA072A Features
` +25.0dBm TYPICAL OUTPUT POWER
` 10.0dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 720 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` Idss SORTED IN 15mA PER BIN RANGE
` 10.0dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 720 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` Idss SORTED IN 15mA PER BIN RANGE
EFA080A-70 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
|
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
8V -5V Idss 20mA 22dBm 175oC -65/175oC 1.1W |
5V -4V 185mA 4mA @ 3dB Compression 150 oC -65/150 oC 0.9W |
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA080A-70 Features
` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
` +23.5dBm TYPICAL OUTPUT POWER
` 7.0 dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` +23.5dBm TYPICAL OUTPUT POWER
` 7.0 dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
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