EFA025A-100P, EFA025A-70, EFA025AL Selling Leads, Datasheet
MFG:EXCELICS Package Cooled:N/A D/C:N/A
EFA025A-100P, EFA025A-70, EFA025AL Datasheet download
Part Number: EFA025A-100P
MFG: EXCELICS
Package Cooled: N/A
D/C: N/A
EFA025A-100P, EFA025A-70, EFA025AL
- Table of contents:
Info of EFA025A-100P
Info of EFA025A-70
Info of EFA025AL
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About EFA018A-70
PDF/DataSheet Download
Datasheet: EFA018A-70
File Size: 26557 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About EFA025A-70
PDF/DataSheet Download
Datasheet: EFA025A-70
File Size: 49709 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
About EFA025AL
PDF/DataSheet Download
Datasheet: EFA025AL
File Size: 28696 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
EFA025A-70 Maximum Ratings
|
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
|
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
10V -6V Idss 6mA 20dBm 175oC -65/175oC 370mW |
6V -4V 52mA 1mA @ 3dB Compression 150 oC -65/150 oC 310mW |
Note: 1 Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA025A-70 Features
` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE
` +20.0dBm TYPICAL OUTPUT POWER
` 10.0dB TYPICAL POWER GAIN AT 12GHz
` TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz
` 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` +20.0dBm TYPICAL OUTPUT POWER
` 10.0dB TYPICAL POWER GAIN AT 12GHz
` TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz
` 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
EFA025AL Maximum Ratings
|
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
|
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
12V -8V Idss 6mA 19dBm 175oC -65/175oC 880mW |
8V -4V Idss 1mA @ 3dB Compression 150oC -65/150oC 730mW |
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
EFA025AL Features
` +20.0dBm TYPICAL OUTPUT POWER
` 11.5dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` Idss SORTED IN 5mA PER BIN RANGE
` 11.5dB TYPICAL POWER GAIN AT 12GHz
` 0.3 X 250 MICRON RECESSED "MUSHROOM" GATE
` Si3N4 PASSIVATION
` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY
` Idss SORTED IN 5mA PER BIN RANGE
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