Features: ` +20.0dBm TYPICAL OUTPUT POWER` 11.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 250 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY` Idss SORTED IN 5mA PER BIN RANGESpecifications SYMBOLS ...
EFA025AL: Features: ` +20.0dBm TYPICAL OUTPUT POWER` 11.5dB TYPICAL POWER GAIN AT 12GHz` 0.3 X 250 MICRON RECESSED MUSHROOM GATE` Si3N4 PASSIVATION` ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFF...
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Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +18.5dBm TYPICAL OUTPUT POWER` 10.5dB TYP...
Features: ` NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE` +20.0dBm TYPICAL OUTPUT POWER` 10.0dB TYP...
SYMBOLS |
PARAMETERS |
ABSOLUTE1 |
CONTINUOUS2 |
Vds Vgs Ids Igsf Pin Tch Tstg Pt |
Drain-Source Voltage Gate-Source Voltage Drain Current Forward Gate Current Input Power Channel Temperature Storage Temperature Total Power Dissipation |
12V -8V Idss 6mA 19dBm 175oC -65/175oC 880mW |
8V -4V Idss 1mA @ 3dB Compression 150oC -65/150oC 730mW |