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Notes: 1. Built with adjacent die from a single wafer. 2. Contact the Diodes, Inc. Sales department. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 4. Maximum combined dissipation. 5. No purposefully added lead.
DMMT5551S Features
Epitaxial Planar Die Construction Complementary PNP Type Available (DMMT5401) Ideal for Medium Power Amplification and Switching Intrinsically Matched NPN Pair (Note 1) 2% Matched Tolerance, hFE, V CE(SAT), V BE(SAT) 1% Matched Tolerance, Available (Note 2) Available in Lead Free/RoHS Compliant Version (Note 5)