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DMMT5551S

Features: Epitaxial Planar Die ConstructionComplementary PNP Type Available (DMMT5401)Ideal for Medium Power Amplification and SwitchingIntrinsically Matched NPN Pair (Note 1)2% Matched Tolerance, hFE, V CE(SAT), V BE(SAT)1% Matched Tolerance, Available (Note 2)Available in Lead Free/RoHS Complian...

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SeekIC No. : 004327630 Detail

DMMT5551S: Features: Epitaxial Planar Die ConstructionComplementary PNP Type Available (DMMT5401)Ideal for Medium Power Amplification and SwitchingIntrinsically Matched NPN Pair (Note 1)2% Matched Tolerance, h...

DMMT5551S Data Sheet

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Part Number:
DMMT5551S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Epitaxial Planar Die Construction
Complementary PNP Type Available (DMMT5401)
Ideal for Medium Power Amplification and Switching
Intrinsically Matched NPN Pair (Note 1)
2% Matched Tolerance, hFE, V CE(SAT), V BE(SAT)
1% Matched Tolerance, Available (Note 2)
Available in Lead Free/RoHS Compliant Version (Note 5)




Specifications

Characteristic
Symbol
DMDT9922
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCBO
160
V
Emitter-Base Voltage
VEBO
6.0
V
Collector-Collector Voltage
VCCO
200
mA
Power Dissipation (Note 3)
Pd
300
mW
Thermal Resistance, Junction to Ambient (Note3)
RJA
417
K/W
Operating and Storage and Temperature Range
Tj,TSTG
-55 to +150

Notes: 1. Built with adjacent die from a single wafer.
2. Contact the Diodes, Inc. Sales department.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Maximum combined dissipation.
5. No purposefully added lead.

Part Number DMMT5551S
Product Type NPN + NPN
V CEO(V) 160
@ IC (A) 0.01
PD (W) 0.3
hFE Min 80
hFE Max 250
VCE (SAT) (mV) 150
@ IB (mA) 1
fT (MHz) 300





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