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BUV27, BUV27A, BUV28

BUV27, BUV27A, BUV28 Selling Leads, Datasheet

MFG:ST  Package Cooled:TO-220  D/C:06+

BUV27, BUV27A, BUV28 Picture

BUV27, BUV27A, BUV28 Datasheet download

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Part Number: BUV27

 

MFG: ST

Package Cooled: TO-220

D/C: 06+

 

 

 
 
 
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About BUV27

PDF/DataSheet Download

Datasheet: BUV27

File Size: 63642 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About BUV10N

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Datasheet: BUV10N

File Size: 11227 KB

Manufacturer: SEME-LAB [Seme LAB]

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About BUV28

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Datasheet: BUV28

File Size: 114504 KB

Manufacturer: MOSPEC [Mospec Semiconductor]

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BUV27 General Description

The BUV27 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.

BUV27 Maximum Ratings

Symbol Parameter Value Unit
VCBO Collector-base Voltage (IE=0) 240 V
VCEO Collector-Emitter Voltage (IB=0) 120 V
VEBO Emitter-Base Voltage (IC=0) 7 V
IC

Emitter Current

12 A
ICM Collector Peak Current (tp<10ms) 20 A
IB Base Current 4 A
IBM Base Peak Current (tp<10ms) 6 A
Ptot Total Dissipation at TC<25 85 W
ptot Total Dissipation at TC<60 65 W
Tstg Storage Temperature -65 to + 175
Tj

Max. Operating Junction Temperature

175

BUV27 Features

*SGS-THOMSON PREFERRED SALESTYPE 
*NPN TRANSISTOR 
*FAST SWITCHING SPEED 
*LOW COLLECTOR EMITTER SATURATION

BUV27 Typical Application

*SWITCHING REGULATORS 
*MOTOR CONTROL

BUV28 General Description

·With TO-220C package
·Low collector saturation voltage
·Fast switching speed

BUV28 Maximum Ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 400 V
VCBO Collector-emitter voltage Open base 200 V
VEBO Emitter-base voltage Open collector 7 V
IC Collector current   10 A
IB Base current   2 A
Ptot Total power dissipation TC=25 70 W
TJ Junction Temperature   150
Tstg Storage Temperature Range   -65~150

BUV28 Typical Application

·High frequency and efficiency converters
·Switching regulators
·Motor control

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