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BUV26, BUV26A, BUV26G

BUV26, BUV26A, BUV26G Selling Leads, Datasheet

MFG:ON Semiconductor  Category:Discrete Semiconductor Products  Package Cooled:TO-220  D/C:02+

BUV26G Picture

BUV26, BUV26A, BUV26G Datasheet download

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Part Number: BUV26G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor

Package Cooled: TO-220

D/C: 02+

Description: TRANS NPN 90V 20A BIPLAR TO220AB

 

 
 
 
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About BUV26

PDF/DataSheet Download

Datasheet: BUV26

File Size: 63714 KB

Manufacturer: STMICROELECTRONICS [STMicroelectronics]

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About BUV10N

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Datasheet: BUV10N

File Size: 11227 KB

Manufacturer: SEME-LAB [Seme LAB]

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About BUV10N

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Datasheet: BUV10N

File Size: 11227 KB

Manufacturer: SEME-LAB [Seme LAB]

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BUV26 General Description

The BUV26 is a Multiepitaxial Planar NPN Transistor in TO-220 package. It is intended for use in high frequency and efficency converters, switching regulators and motor control.

BUV26 Maximum Ratings

 Symbol  Parameter  Value  Unit
 VCBO  Collector-base Voltage (IE=0)  180  V
 VCEO  Collector-Emitter Voltage (IB=0)  90  V
 VEBO  Emitter-Base Voltage (IC=0)  7  V
 IC

 Emitter Current

 14  A
 ICM  Collector Peak Current (tp<10ms)  25  A
 IB  Base Current  4  A
 IBM  Base Peak Current (tp<10ms)  6  A
 Ptot  Total Dissipation at TC<25  85  W
 ptot  Total Dissipation at TC<60  65  W
 Tstg  Storage Temperature  -65 to + 175  
 Tj

 Max. Operating Junction Temperature

 175  

BUV26 Features

*SGS-THOMSON PREFERRED SALESTYPE 
*NPN TRANSISTOR 
*FAST SWITCHING SPEED 
*LOW COLLECTOR EMITTER SATURATION

BUV26 Typical Application

*SWITCHING REGULATORS 
*MOTOR CONTROL

BUV26A General Description

·With TO-220C package
·Low collector saturation voltage
·Fast switching speed

BUV26A Maximum Ratings

SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter 200 V
VCBO Collector-emitter voltage Open base 100 V
VEBO Emitter-base voltage Open collector 5 V
IC Collector current   14 A
ICM Collector current-peak   25 A
IB Base current   4 A
IBM Base current (peak)   6  
Ptot Total power dissipation TC=25 65 W
TJ Junction Temperature   150
Tstg Storage Temperature Range   -65~150

BUV26A Typical Application

·For use in high frequency and efficiency converters,switching regulators and motor control

BUV26G Parameters

Technical/Catalog InformationBUV26G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)90V
Current - Collector (Ic) (Max)20A
Power - Max85W
DC Current Gain (hFE) (Min) @ Ic, Vce-
Vce Saturation (Max) @ Ib, Ic600mV @ 400mA, 6A
Frequency - Transition-
Current - Collector Cutoff (Max)3mA
Mounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)
PackagingTube
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BUV26G
BUV26G

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