Application*High DC current gain; hFEmin.= 20 at IC= 6 A*Low VCE(sat) , VCE(sat)max. = 0.6 V at IC= 6 A*Very fast switching times:TFmax. = 0.8s at IC= 12 ASpecifications Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 200 Vdc Collector-Base Voltage VCBO 250 Vdc ...
BUV11: Application*High DC current gain; hFEmin.= 20 at IC= 6 A*Low VCE(sat) , VCE(sat)max. = 0.6 V at IC= 6 A*Very fast switching times:TFmax. = 0.8s at IC= 12 ASpecifications Rating Symbol Value ...
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Rating | Symbol | Value | Unit |
Collector-Emitter Voltage | VCEO(sus) | 200 | Vdc |
Collector-Base Voltage | VCBO | 250 | Vdc |
Emitter-Base Voltage | VEBO | 7 | Vdc |
Collector-Emitter Voltage(VBE=-1.5V) | VCEX | 250 | Vdc |
Collector-Emitter Voltage(RBE=-1.5V) | VCER | 240 | Vdc |
Collector-Current-Continuous -Peak(pw10ms) |
IC ICM |
20 25 |
Adc Apk |
Base-Current continuous | IB | 4 | Adc |
Total Power Dissipation@TC=25 | PD | 150 | Watts |
Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to 200 |