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The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
BUR51 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage(IE=0)
300
V
VCEO
Collector-Emitter Voltage(IB=0)
200
V
VEBO
Emitter-Base Voltage (IC=0)
10
V
IC
Collector Current
60
A
ICM
Collector Peak Current (tp=10ms)
80
A
IB
Base Current
16
A
Ptot
Total Dissipation at Tc25
350
W
Tstg
Storage Temperature
-65 to 200
Tj
Max. Operating Junction Temperature
200
BUR51 Features
*SGS-THOMSON PREFERRED SALESTYPE *NPN TRANSISTOR
BUR51 Connection Diagram
BUR52 General Description
The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.
BUR52 Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage(IE=0)
350
V
VCEO
Collector-Emitter Voltage(IB=0)
250
V
VEBO
Emitter-Base Voltage (IC=0)
10
V
IC
Collector Current
60
A
ICM
Collector Peak Current (tp=10ms)
80
A
IB
Base Current
16
A
Ptot
Total Dissipation at Tc25
350
W
Tstg
Storage Temperature
-65 to 200
Tj
Max. Operating Junction Temperature
200
BUR52 Features
*SGS-THOMSON PREFERRED SALESTYPE *NPN TRANSISTOR *MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE