BUR52

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Emitter- Base Voltage VEBO : 10 V
Collector- Emitter Voltage VCEO Max : 250 V
Package / Case : TO-3
Maximum DC Collector Current : 60 A
Maximum Operating Frequency : 16 MHz


Features:

*SGS-THOMSON PREFERRED SALESTYPE
*NPN TRANSISTOR
*MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE 


Application

*LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


Pinout




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage(IE=0)	350	V
VCEO	Collector-Emitter Voltage(IB=0)	250	V
VEBO	Emitter-Base Voltage (IC=0)	10	V
IC	Collector Current	60	A
ICM	Collector Peak Current (tp=10ms)	80	A
IB	Base Current	16	A
Ptot	Total Dissipation at Tc25	350	W
Tstg	Storage Temperature	-65 to 200
Tj	Max. Operating Junction Temperature	200

Description

The BUR52 is a silicon multiepitaxial planar NPN transistors in modified Jedec TO-3 metal case, intented for use in switching and linear applications in  military and industrial equipment.