BUR51

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Tube
DC Collector/Base Gain hfe Min : 20
Emitter- Base Voltage VEBO : 10 V
Package / Case : TO-3
Collector- Emitter Voltage VCEO Max : 200 V
Maximum DC Collector Current : 60 A
Maximum Operating Frequency : 16 MHz


Features:

*SGS-THOMSON PREFERRED SALESTYPE
*NPN TRANSISTOR


Pinout




Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage(IE=0)	300	V
VCEO	Collector-Emitter Voltage(IB=0)	200	V
VEBO	Emitter-Base Voltage (IC=0)	10	V
IC	Collector Current	60	A
ICM	Collector Peak Current (tp=10ms)	80	A
IB	Base Current	16	A
Ptot	Total Dissipation at Tc25	350	W
Tstg	Storage Temperature	-65 to 200
Tj	Max. Operating Junction Temperature	200

Description

The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in  military and industrial equipment.


Parameters:

Technical/Catalog Information	BUR51
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	60A
Power - Max	350W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic	1.5V @ 5A, 50A
Frequency - Transition	16MHz
Current - Collector Cutoff (Max)	1mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BUR51 BUR51 497 2633 5 ND 49726335ND 497-2633-5