BUP306D, BUP307, BUP307D Selling Leads, Datasheet
MFG:?09+ Package Cooled:SIEMENS D/C:04+
BUP306D, BUP307, BUP307D Datasheet download
Part Number: BUP306D
MFG: ?09+
Package Cooled: SIEMENS
D/C: 04+
MFG:?09+ Package Cooled:SIEMENS D/C:04+
BUP306D, BUP307, BUP307D Datasheet download
MFG: ?09+
Package Cooled: SIEMENS
D/C: 04+
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PDF/DataSheet Download
Datasheet: BUP306D
File Size: 226824 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUP307
File Size: 351632 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUP307D
File Size: 351001 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC | 23 15 | |
Pulsed collector current, tp=1ms TC=25 TC=90 |
ICpuls | 46 30 |
A |
Diode forward current TC=90 |
IF | 18 | |
Pulsed diode current, tp=1ms TC=25 |
IFpuls | 108 | |
Power dissipation TC=25 |
Ptot | 165 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature | Tstg | -55...+150 | |
DIN humidity category, DIN 40 040 | - | E | - |
IEC climatic category, DIN IEC 68-1 | - | 55/150/56 |
Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC | 35 23 |
A |
Pulsed collector current, tp=1ms TC=25 TC=90 |
ICPUls |
70 | |
Avalanche energy, single pulse IC=10A, VCC=24V, RGE=25 L=200UH, Tj=25 |
EAS | 23 | mJ |
Power dissipation TC=25 |
Ptot | 310 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature | Tstg | -55...+150 | |
DIN humidity category, DIN40 040 | - | E | - |
IEC climatic category, DIN IEC 68-1 |
- | 55/150/56 |
Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC | 35 23 | |
Pulsed collector current, tp=1ms TC=25 TC=90 |
ICpuls | 70 46 |
A |
Diode forward current TC=90 |
IF | 18 | |
Pulsed diode current, tp=1ms TC=25 |
IFpuls | 108 | |
Power dissipation TC=25 |
Ptot | 300 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature | Tstg | -55...+150 | |
DIN humidity category, DIN 40 040 | - | E | - |
IEC climatic category, DIN IEC 68-1 | - | 55/150/56 |