Specifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE=20k VCGR 1200 Gate-emitter voltage VGE ±20 DC collector currentTC=25TC=90 IC 3.6 2.4 A Pulsed collector current,tp=1msTC=25TC=90 ICpuls 7.2 4.8 Av...
BUP200: Specifications Parameter Symbol Values Unit Collector-emitter voltage VCE 1200 V Collector-gate voltage RGE=20k VCGR 1200 Gate-emitter voltage VGE ±20 DC collector current...
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Parameter | Symbol | Values | Unit |
Collector-emitter voltage |
VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC |
3.6 2.4 |
A |
Pulsed collector current,tp=1ms TC=25 TC=90 |
ICpuls |
7.2 4.8 | |
Avalanche energy, single pulse IC=1.5A, VCC=50V,RGE=25 L=3.3mH,Tj=25 |
EAS | 3.5 | mJ |
Power dissipation TC=25 |
Ptot | 50 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature |
Tstg | -55...+150 | |
DIN humidity category,DIN40 040 | - | E | - |
IEC climatic category,DIN IEC 68-1 | - | 55/150/56 |