BUP101, BUP200, BUP200D Selling Leads, Datasheet
MFG:PHIL/ST/MOT Package Cooled:TO-3P D/C:03+
BUP101, BUP200, BUP200D Datasheet download
Part Number: BUP101
MFG: PHIL/ST/MOT
Package Cooled: TO-3P
D/C: 03+
MFG:PHIL/ST/MOT Package Cooled:TO-3P D/C:03+
BUP101, BUP200, BUP200D Datasheet download
MFG: PHIL/ST/MOT
Package Cooled: TO-3P
D/C: 03+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BUP200
File Size: 307607 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUP200
File Size: 307607 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUP200D
File Size: 332891 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
Parameter | Symbol | Values | Unit |
Collector-emitter voltage |
VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC |
3.6 2.4 |
A |
Pulsed collector current,tp=1ms TC=25 TC=90 |
ICpuls |
7.2 4.8 | |
Avalanche energy, single pulse IC=1.5A, VCC=50V,RGE=25 L=3.3mH,Tj=25 |
EAS | 3.5 | mJ |
Power dissipation TC=25 |
Ptot | 50 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature |
Tstg | -55...+150 | |
DIN humidity category,DIN40 040 | - | E | - |
IEC climatic category,DIN IEC 68-1 | - | 55/150/56 |
Parameter | Symbol | Values | Unit |
Collector-emitter voltage | VCE | 1200 | V |
Collector-gate voltage RGE=20k |
VCGR | 1200 | |
Gate-emitter voltage | VGE | ±20 | |
DC collector current TC=25 TC=90 |
IC | 3.6 2.4 | |
Pulsed collector current, tp=1ms TC=25 TC=90 |
ICpuls | 7.2 4.8 |
A |
Diode forward current TC=90 |
IF | 8 | |
Pulsed diode current, tp=1ms TC=25 |
IFpuls | 48 | |
Power dissipation TC=25 |
Ptot | 50 | W |
Chip or operating temperature | Tj | -55...+150 | |
Storage temperature | Tstg | -55...+150 | |
DIN humidity category, DIN 40 040 | - | E | - |
IEC climatic category, DIN IEC 68-1 | - | 55/150/56 |