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The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
BU808DFI Maximum Ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage (IE = 0)
1400
V
VCEO
Collector-Emit ter Voltage (IB = 0)
700
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
8
A
ICM
Collector Peak Current (tp < 5 ms)
10
A
IB
Base Current
3
A
IBM
Base Peak Current (tp < 5 ms)
6
A
Ptot
Total Dissipation at Tc = 25
52
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BU808DFI Features
·STMicroelectronics PREFERRED SALESTYPE · NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE · HIGH VOLTAGE CAPABILITY ( > 1400 V ) · HIGH DC CURRENT GAIN ( TYP. 150 ) · U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)) ·LOW BASE-DRIVE REQUIREMENTS ·DEDICATED APPLICATION NOTE AN1184
BU808DFI Typical Application
· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.