Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY MOLDED ISOLATED PACKAGE 2KV DC ISOLATION(U.L. COMPLIANT)· LOW BASE-DRIVE REQUIREMENTS· DEDICATED APPL...
BU808DFP: Features: · STMicroelectronics PREFERRED SALESTYPE· NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE· HIGH VOLTAGE CAPABILITY ( > 1400 V )· HIGH DC CURRENT GAIN ( TYP. 150 )· FULLY M...
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· COST EFFECTIVE SOLUTION FOR HORIZONTAL DEFLECTION IN LOW END TV UP TO 21 INCHES.
Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage (IE = 0) | 1400 | V |
VCEO | Collector-Emit ter Voltage (IB = 0) | 700 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
IC | Collector Current | 8 | A |
ICM | Collector Peak Current (tp < 5 ms) | 10 | A |
IB | Base Current | 3 | A |
IBM | Base Peak Current (tp < 5 ms) | 6 | A |
Ptot | Total Dissipation at Tc = 25 | 42 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
The BU808DFP is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.