BU806

Transistor Polarity : NPN
Mounting Style : Through Hole
Packaging : Bulk
Configuration : Single
Maximum Operating Temperature : + 150 C
Maximum Collector Cut-off Current : 100 uA
Package / Case : TO-220
Maximum DC Collector Current : 8 A
Power Dissipation : 60 W
Emitter- Base Voltage VEBO : 6 V
Collector- Emitter Voltage VCEO Max : 200 V
Collector- Base Voltage VCBO : 200 V


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Base Voltage : BU806 : BU807	400 330	V V
VCEO	Collector-Emitter Voltage : BU806 : BU807	200 150	V V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current (DC)	8	A
ICP	*Collector Current (Pulse)	15	A
IB	Base Current	2	A
PC	Collector Dissipation (TC =25 )	60	W
TJ	Junction Temperature	150
TSTG	Storage Temperature	- 55 ~150

Parameters:

Technical/Catalog Information	BU806
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	200V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BU806 BU806 497 7197 5 ND 49771975ND 497-7197-5