Transistors Darlington NPN Sw Darlington
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Configuration : | Single | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 700 V | Emitter- Base Voltage VEBO : | 5 V |
Collector- Base Voltage VCBO : | 1400 V | Maximum DC Collector Current : | 8 A |
Power Dissipation : | 52 W | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-93 |
Packaging : | Tube |
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Symbol | Parameter | Value | Unit |
VCBO | Collector-Base Voltage (IE = 0) | 1400 | V |
VCEO | Collector-Emit ter Voltage (IB = 0) | 700 | V |
VEBO | Emitter-Base Voltage (IC = 0) | 5 | V |
IC | Collector Current | 8 | A |
ICM | Collector Peak Current (tp < 5 ms) | 10 | A |
IB | Base Current | 3 | A |
IBM | Base Peak Current (tp < 5 ms) | 6 | A |
Ptot | Total Dissipation at Tc = 25 | 52 | W |
Tstg | Storage Temperature | -65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.
Technical/Catalog Information | BU808DFI |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Transistor Type | NPN - Darlington |
Voltage - Collector Emitter Breakdown (Max) | 700V |
Current - Collector (Ic) (Max) | 8A |
Power - Max | 52W |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5A, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500mA, 5A |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | 400A |
Mounting Type | Through Hole |
Package / Case | ISOWATT-218-3 |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BU808DFI BU808DFI |