MFG:Infineon Technologies (VA) Category:Discrete Semiconductor Products Package Cooled:SOT23-6 D/C:0414/
BSL211SP, BSL307SP, BSM(SKM)151F Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies (VA)
Package Cooled: SOT23-6
D/C: 0414/
Description: MOSFET P-CH 30V 5.5A 6-TSOP
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PDF/DataSheet Download
Datasheet: BSL211SP
File Size: 77839 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSL307SP
File Size: 80230 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSM100GAL120DN2
File Size: 83162 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
| Technical/Catalog Information | BSL211SP |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 4.7A |
| Rds On (Max) @ Id, Vgs | 67 mOhm @ 4.7A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 654pF @ 15V |
| Power - Max | 2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 12.4nC @ 4.5V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSL211SP BSL211SP BSL211SPINCT ND BSL211SPINCTND BSL211SPINCT |
|
Parameter |
Symbol |
Value |
Unit |
|
Continuous drain current TA=25°C TA=70°C |
ID |
-4.7 -3.8 |
A |
|
Pulsed drain current TA=25°C |
I D puls |
-18.8 | |
|
Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25 |
EAS |
26 |
mJ |
|
Reverse diode dv/dt IS=-5.5A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s |
|
Gate source voltage |
VGS |
±20 |
V |
|
Power dissipation TA=25°C |
Ptot |
2 |
A |
|
Operating and storage temperature |
T j , Tstg |
-55... +150 |
°C |
|
IEC climatic category; DIN IEC 68-1 |
55/150/56 |
| Technical/Catalog Information | BSL307SP |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 5.5A |
| Rds On (Max) @ Id, Vgs | 43 mOhm @ 5.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 805pF @ 25V |
| Power - Max | 2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 29nC @ 10V |
| Package / Case | 6-TSOP |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSL307SP BSL307SP BSL307SPINCT ND BSL307SPINCTND BSL307SPINCT |
|
Parameter |
Symbol |
Value |
Unit |
|
Continuous drain current TA=25°C TA=70°C |
ID |
-5.5 -4.4 |
A |
|
Pulsed drain current TA=25°C |
I D puls |
-22 | |
|
Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25 |
EAS |
44 |
mJ |
|
Reverse diode dv/dt IS=-5.5A, VDS=24V, di/dt=200A/s, Tjmax=150°C |
dv/dt |
-6 |
kV/s |
|
Gate source voltage |
VGS |
±20 |
V |
|
Power dissipation TA=25°C |
Ptot |
2 |
A |
|
Operating and storage temperature |
T j , Tstg |
-55... +150 |
°C |
|
IEC climatic category; DIN IEC 68-1 |
55/150/56 |
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