BSH111, BSH111 T/R, BSH112 Selling Leads, Datasheet
MFG:Philips Package Cooled:Sot-23 D/C:09+
BSH111, BSH111 T/R, BSH112 Datasheet download
Part Number: BSH111
MFG: Philips
Package Cooled: Sot-23
D/C: 09+
BSH111, BSH111 T/R, BSH112
- Table of contents:
Info of BSH111
Info of BSH111 T/R
Info of BSH112
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About BSH111
PDF/DataSheet Download
Datasheet: BSH111
File Size: 118560 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSH101
PDF/DataSheet Download
Datasheet: BSH101
File Size: 658780 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BSH112
PDF/DataSheet Download
Datasheet: BSH112
File Size: 297203 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BSH111 General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability: BSH111 in SOT23.
Product availability: BSH111 in SOT23.
BSH111 Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage (DC) |
25 °C Tj 150 °C |
55 |
V | |
|
VDGR |
drain-gate voltage (DC) |
25 °C Tj 150 °C; RGS = 20 k |
55 |
V | |
|
VGS |
gate-source voltage (DC) |
±10 |
V | ||
|
ID |
drain current (DC) |
Tsp = 25 °C; VGS = 4.5V; Figure 2 and 3 |
335 |
mA | |
| Tsp = 100 °C; VGS = 4.5V; Figure 2 |
212 |
mA | |||
|
IDM |
peak drain current |
Tsp = 25 °C; pulsed; tp 10 s;Figure 3 |
1.3 |
mA | |
|
Ptot |
total power dissipation |
Tsp = 25 °C; Figure 1 |
0.83 |
W | |
|
Tstg |
storage temperature |
-65 |
+150 |
°C | |
|
Tj |
operating junction temperature |
-65 |
+150 |
°C |
BSH111 Features
· TrenchMOS™ technology
· Very fast switching
· Low threshold voltage
· Subminiature surface mount package.
· Very fast switching
· Low threshold voltage
· Subminiature surface mount package.
BSH111 Typical Application
· Battery management
· High speed switch
·Logic level translator.
· High speed switch
·Logic level translator.
BSH111 Connection Diagram
BSH112 General Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: BSH112 in SOT23.
BSH112 Maximum Ratings
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
VDS |
drain-source voltage (DC) |
Tj = 25 to 150 °C |
60 |
V | |
|
VDGR |
drain-gate voltage (DC) |
Tj = 25 to 150 °C; RGS = 20 k |
|
60 |
V |
|
VGS |
gate-source voltage (DC) |
±15 |
V | ||
|
ID |
drain current (DC) |
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 |
300 |
mA | |
| Tsp = 100 °C; VGS = 10 V; Figure 2 | 190 | mA | |||
|
IDM |
peak drain current |
Tsp = 25 °C; pulsed; tp 10 s;Figure 3 |
1.2 |
mA | |
|
Ptot |
total power dissipation |
Tsp = 25 °C; Figure 1 |
0.83 |
W | |
|
| |||||
|
|
| ||||
|
Tstg |
storage temperature |
-65 |
+150 |
°C | |
|
Tj |
operating junction temperature |
-65 |
+150 |
°C |
BSH112 Features
· TrenchMOS™ technology
· Very fast switching
· Logic level compatible
· Subminiature surface mount package
·Gate-source ESD protection diodes
· Very fast switching
· Logic level compatible
· Subminiature surface mount package
·Gate-source ESD protection diodes
BSH112 Typical Application
· Relay driver
·High speed line driver
· Logic level translator
·High speed line driver
· Logic level translator
BSH112 Connection Diagram
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