BSH106, BSH107, BSH108 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-23 D/C:09+(ROHS)
BSH106, BSH107, BSH108 Datasheet download
Part Number: BSH106
MFG: PHILIPS
Package Cooled: SOT-23
D/C: 09+(ROHS)
MFG:PHILIPS Package Cooled:SOT-23 D/C:09+(ROHS)
BSH106, BSH107, BSH108 Datasheet download
MFG: PHILIPS
Package Cooled: SOT-23
D/C: 09+(ROHS)
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Datasheet: BSH106
File Size: 149859 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BSH107
File Size: 156494 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BSH108
File Size: 326035 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.
The BSH106 is supplied in the SOT363 subminiature surface mounting package.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Drain-source voltage |
20 |
V | ||
VDGR |
Drain-gate voltage |
RGS = 20 k |
20 |
V | |
VGS |
Gate-source voltage |
± 8 |
V | ||
ID |
Drain current (DC) |
Ta = 25 °C |
1.05 |
A | |
Ta = 100 °C |
0.67 |
A | |||
IDM |
Drain current (pulse peak value) |
Ta = 25 °C |
4.2 |
A | |
Ta = 25 °C |
0.417 |
W | |||
Ta = 100 °C |
0.17 |
W | |||
Ptot |
Total power dissipation |
||||
Tstg, Tj |
Storage & operating temperature |
-55 |
150 |
°C |
N-channel, enhancement mode,logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal forbattery powered applications and high speed digital interfacing.
The BSH107 is supplied in the SOT457 subminiature surface mounting package.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Drain-source voltage |
20 |
V | ||
VDGR |
Drain-gate voltage |
RGS = 20 k |
20 |
V | |
VGS |
Gate-source voltage |
± 8 |
V | ||
ID |
Drain current (DC) |
Ta = 25 °C |
1.75 |
A | |
Ta = 100 °C |
1.1 |
A | |||
IDM |
Drain current (pulse peak value) |
Ta = 25 °C |
7 |
A | |
Ta = 25 °C |
0.417 |
W | |||
Ta = 100 °C |
0.17 |
W | |||
Ptot |
Total power dissipation |
||||
Tstg, Tj |
Storage & operating temperature |
-55 |
150 |
°C |
• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount package
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) |
Tj = 25 to 150 °C |
30 |
V | |
VDGR |
drain-gate voltage (DC) |
Tj = 25 to 150 °C; RGS = 20 k |
30 |
V | |
VGS |
gate-source voltage (DC) |
±20 |
V | ||
ID |
drain current (DC) |
Tsp = 25 °C; VGS = 5V; Figure 2 and 3 |
1.9 |
mA | |
Tsp = 100 °C; VGS =5V; Figure 2 |
1.2 |
mA | |||
IDM |
peak drain current |
Tsp = 25 °C; pulsed; tp 10 s;Figure 3 |
1.3 |
mA | |
Ptot |
total power dissipation |
Tsp = 25 °C; Figure 1 |
0.83 |
W | |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
operating junction temperature |
-65 |
+150 |
°C |