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BSH106, BSH107, BSH108

BSH106, BSH107, BSH108 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT-23  D/C:09+(ROHS)

BSH106, BSH107, BSH108 Picture

BSH106, BSH107, BSH108 Datasheet download

Five Points

Part Number: BSH106

 

MFG: PHILIPS

Package Cooled: SOT-23

D/C: 09+(ROHS)

 

 

 
 
 
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BSH106 Suppliers

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  • BSH106

  • Vendor: PHILIPS D/C: 10+& Qty: 27000 Note: New & Original,stock  Adddate: 2024-12-22
  • Inquire Now
  • BOYU ELECTRONICS (HK)COMPANY   China
    Contact: Ms.Lemon   MSN:szboyux@hotmail.com
    Tel: 86-0755-82546491
    Fax: 86-0755-82812618
    (113)

About BSH106

PDF/DataSheet Download

Datasheet: BSH106

File Size: 149859 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BSH107 Suppliers

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  • BSH103

  • Vendor: PHILIPS D/C: 11+& Qty: SOT23  Adddate: 2024-12-22
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About BSH107

PDF/DataSheet Download

Datasheet: BSH107

File Size: 156494 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BSH108 Suppliers

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  • BSH108

  • Vendor: nxp D/C: 08+& Qty: 3990  Adddate: 2024-12-22
  • Inquire Now
  • Hodenshi Electronics   China
    Contact: Ms.sumemr  
    Tel: 86-755-88321259
    Fax:
    (27)
  • BSH103

  • Vendor: PHILIPS D/C: 11+& Qty: SOT23  Adddate: 2024-12-22
  • Inquire Now
  • Walsoon Group Ltd   China
    Contact: Mr.StevenLee   MSN:steven200867@hotmail.com
    Tel: 86-755-82818867-808
    Fax: 86-755-82818852
    (17)

About BSH108

PDF/DataSheet Download

Datasheet: BSH108

File Size: 326035 KB

Manufacturer: PHILIPS [Philips Semiconductors]

Download : Click here to Download

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BSH106 General Description

N-channel, enhancement mode, logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing.

The BSH106 is supplied in the SOT363 subminiature surface mounting package.

BSH106 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS

Drain-source voltage

20
V
VDGR
Drain-gate voltage
RGS = 20 k
20
V
VGS
Gate-source voltage
± 8
V
ID
Drain current (DC)
Ta = 25 °C
1.05
A
Ta = 100 °C
0.67
A
IDM
Drain current (pulse peak value)
Ta = 25 °C
4.2
A
Ta = 25 °C
0.417
W
Ta = 100 °C
0.17
W
Ptot
Total power dissipation
Tstg, Tj
Storage & operating temperature
-55
150
°C

BSH106 Features

• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount package

BSH106 Connection Diagram

BSH107 General Description

N-channel, enhancement mode,logic level, field-effect power transistor. This device has very low threshold voltage and extremely fast switching making it ideal forbattery powered applications and high speed digital interfacing.

The BSH107 is supplied in the SOT457 subminiature surface mounting package.

BSH107 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS

Drain-source voltage

20
V
VDGR
Drain-gate voltage
RGS = 20 k
20
V
VGS
Gate-source voltage
± 8
V
ID
Drain current (DC)
Ta = 25 °C
1.75
A
Ta = 100 °C
1.1
A
IDM
Drain current (pulse peak value)
Ta = 25 °C
7
A
Ta = 25 °C
0.417
W
Ta = 100 °C
0.17
W
Ptot
Total power dissipation
Tstg, Tj
Storage & operating temperature
-55
150
°C

BSH107 Features

• Very low threshold voltage
• Fast switching
• Logic level compatible
• Subminiature surface mount package

BSH107 Connection Diagram

BSH108 General Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability: BSH108 in SOT23.

BSH108 Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
Tj = 25 to 150 °C
30
V

VDGR

drain-gate voltage (DC)

Tj = 25 to 150 °C; RGS = 20 k

30

V

VGS
gate-source voltage (DC)
±20
V
ID
drain current (DC)
Tsp = 25 °C; VGS = 5V;
Figure 2 and 3

1.9

mA

Tsp = 100 °C; VGS =5V; Figure 2

1.2

mA
IDM
peak drain current
Tsp = 25 °C; pulsed; tp 10 s;Figure 3
1.3
mA
Ptot
total power dissipation
Tsp = 25 °C; Figure 1
0.83
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
-65
+150
°C
.

BSH108 Features

· TrenchMOS™ technology
· Very fast switching
· Logic level compatible
· Subminiature surface mount package.

BSH108 Typical Application

· Battery management
· High speed switch
· Low power DC to DC converter.

BSH108 Connection Diagram

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