BSH104 Selling Leads, Price trend, BSH104 DataSheet download, circuit diagram from SeekIC.com

Features: · High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL, etc.· Very low threshold.Application` 'Glue-logic': interface between logic blocks and/or periphery` Power management` DC to DC converters` General purpose switch` Battery powered applications.PinoutSpecifica...

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SeekIC No. : 004302135 Detail

BSH104: Features: · High-speed switching· No secondary breakdown· Direct interface to C-MOS, TTL, etc.· Very low threshold.Application` 'Glue-logic': interface between logic blocks and/or periphery` Power m...

BSH104 Data Sheet

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Part Number:: BSH104
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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BSH101 evaluate
Features: · Very low threshold· High-speed switching· No secondary breakdown· Direct interface to ...
BSH102 evaluate
Features: · Very low threshold· High-speed switching· No secondary breakdown· Direct interface to ...
BSH103 evaluate
Features: · Very low threshold· High-speed switching· No secondary breakdown· Direct interface to ...

Product Details

Description

Features:

· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL, etc.
· Very low threshold.

Application

` 'Glue-logic': interface between logic blocks and/or periphery
` Power management
` DC to DC converters
` General purpose switch
` Battery powered applications.

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DS	drain-source voltage (DC)			12	V
V_GS	gate-source voltage (DC)			±8	V
I_D	drain current (DC)	Ts = 80 °C; note 1		1.1	A
I_DM	peak drain current	note 2		4.5	A
P_tot	total power dissipation	Ts = 80 °C		0.5	W
		T_amb = 25 °C; note 3		0.75	W
		T_amb = 25 °C; note 4		0.54	W
T_stg	storage temperature		-55	+150	°C
T_j	operating junction temperature		-55	+150	°C

Notes
1. T_s is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Device mounted on a printed-circuit board with a R _{th a-tp} (ambient to tie-point) of 27.5 K/W.
4. Device mounted on a printed-circuit board with a R_{th a-tp} (ambient to tie-point) of 90 K/W.

Description

N-channel enhancement mode MOS transistor BSH104 in a SOT23 SMD package.

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BSH104

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