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I D=50 A, VDS=24 V, di /dt =200 A/µs, T j,max=150 °C
6
kV/µs
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
T C=25 °C
78
W
T A=25 °C, RthJA=45 K/W2)
2.8
Operating and storage temperature
Tj, Tstg
-55 ... 150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
BSC032N03S Features
• Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC converters • Qualified according to JEDEC1 for target applications • N-channel • Logic level • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • Avalanche rated • dv /dt rated