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BSC059N03S

Features: • Fast switching MOSFET for SMPS• Optimized technology for notebook DC/DC converters• Qualified according to JEDEC1 for target applications• N-channel• Logic level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)R...

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BSC059N03S: Features: • Fast switching MOSFET for SMPS• Optimized technology for notebook DC/DC converters• Qualified according to JEDEC1 for target applications• N-channel• Logic ...

BSC059N03S Data Sheet

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Part Number:
BSC059N03S
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC1 for target applications
• N-channel
• Logic level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated


Pinout

Connection Diagram


Specifications

Parameter Symbol Conditions Value Unit
Continuous drain current ID T C=25 °C 50 V
T C=100 °C 46
T A=25 °C,
RthJA=45 K/W2)		 17.5
Pulsed drain current ID,pulse T C=25 °C3) 200
Avalanche energy, single pulse EAS I D=50 A, RGS=25 Ω 150 mJ
Reverse diode dv /dt dv /dt I D=50 A, VDS=24 V,
di /dt =200 A/µs,
T j,max=150 °C		 6 kV/µs
Gate source voltage VGS   ±20 V
Power dissipation Ptot T C=25 °C 48 W
T A=25 °C,
RthJA=45 K/W2)		 2.8
Operating and storage temperature Tj, Tstg   -55 ... 150 °C
IEC climatic category; DIN IEC 68-1     55/150/56  



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