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BSC009NE2LS

MOSFET N-CH 25V 41A TDSON-8

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SeekIC No. : 003431310 Detail

BSC009NE2LS: MOSFET N-CH 25V 41A TDSON-8

BSC009NE2LS Data Sheet

floor Price/Ceiling Price

US $ .79~1.92 / Piece | Get Latest Price
Part Number:
BSC009NE2LS
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~25
  • 25~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • Unit Price
  • $1.92
  • $1.64
  • $1.48
  • $1.34
  • $1.21
  • $1.04
  • $.88
  • $.79
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: OptiMOS™ Manufacturer: Infineon Technologies
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 15.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 100A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) @ Vgs: 126nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5800pF @ 12V
Power - Max: 96W Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN Supplier Device Package: PG-TDSON-8    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Cut Tape (CT)Alternate Packaging
Drain to Source Voltage (Vdss): 25V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 8-PowerTDFN
Current - Continuous Drain (Id) @ 25° C: 100A
Power - Max: 96W
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-TDSON-8
Gate Charge (Qg) @ Vgs: 126nC @ 10V
Rds On (Max) @ Id, Vgs: 0.9 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds: 5800pF @ 12V


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