Features: • Fast switching MOSFET for SMPS• Optimized technology for notebook DC/DC converters• Qualified according to JEDEC1 for target applications• N-channel• Logic level• Excellent gate charge x RDS(on) product (FOM)• Very low on-resistance RDS(on)R...
BSC042N03S: Features: • Fast switching MOSFET for SMPS• Optimized technology for notebook DC/DC converters• Qualified according to JEDEC1 for target applications• N-channel• Logic ...
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Parameter | Symbol | Conditions | Value | Unit |
Continuous drain current | ID | T C=25 °C | 50 | V |
T C=100 °C | 50 | |||
T A=25 °C, RthJA=45 K/W2) |
20 | |||
Pulsed drain current | ID,pulse | T C=25 °C3) | 200 | |
Avalanche energy, single pulse | EAS | I D=50 A, RGS=25 Ω | 280 | mJ |
Reverse diode dv /dt | dv /dt | I D=50 A, VDS=24 V, di /dt =200 A/µs, T j,max=150 °C |
6 | kV/µs |
Gate source voltage | VGS | ±20 | V | |
Power dissipation | Ptot | T C=25 °C | 62.5 | W |
T A=25 °C, RthJA=45 K/W2) |
2.8 | |||
Operating and storage temperature | Tj, Tstg | -55 ... 150 | °C | |
IEC climatic category; DIN IEC 68-1 | 55/150/56 |