BLV904, BLV909, BLV91 Selling Leads, Datasheet
MFG:BELLING Package Cooled:158 D/C:00+
BLV904, BLV909, BLV91 Datasheet download
Part Number: BLV904
MFG: BELLING
Package Cooled: 158
D/C: 00+
BLV904, BLV909, BLV91
- Table of contents:
Info of BLV904
Info of BLV909
Info of BLV91
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About BLV904
PDF/DataSheet Download
Datasheet: BLV904
File Size: 134243 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV909
PDF/DataSheet Download
Datasheet: BLV909
File Size: 124956 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV91/SL
PDF/DataSheet Download
Datasheet: BLV91/SL
File Size: 56460 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV904 General Description
NPN silicon planar epitaxial power transistor in an 8-lead SOT409B SMD package with ceramic cap. All leads are isolated from the mounting base.
BLV904 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 60 | V | |
| VCES | collector-emitter voltage | open base | 28 | V | |
| VEBO | emitter-base voltage | open collector | 4 | V | |
| IC | collector current(DC) | 1.2 | A | ||
| IC(AV) | average collector current | 1.2 | A | ||
| Ptot | total power dissipation | Tmb =25 °C; note 1 | 17 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV904 Features
* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
BLV904 Typical Application
* Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.
BLV904 Connection Diagram
BLV909 General Description
NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.
BLV909 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 70 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC | collector current(DC) | 1.5 | A | ||
| IC(AV) | average collector current | 1.5 | A | ||
| Ptot | total power dissipation | Tmb =25 °C; note 1 | 29 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV909 Features
* Emitter ballasting resistors for optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high power gain and easy design of wideband circuits.
BLV909 Typical Application
* Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range.
BLV909 Connection Diagram
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