BLV859, BLV861, BLV861A Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:SOT-262B D/C:N/A
BLV859, BLV861, BLV861A Datasheet download
Part Number: BLV859
MFG: PHILIPS
Package Cooled: SOT-262B
D/C: N/A
BLV859, BLV861, BLV861A
- Table of contents:
Info of BLV859
Info of BLV861
Info of BLV861A
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About BLV859
PDF/DataSheet Download
Datasheet: BLV859
File Size: 129079 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV861
PDF/DataSheet Download
Datasheet: BLV861
File Size: 132296 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV859 General Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT262B 4-lead rectangular flange package, with two ceramic caps. It delivers a Po sync = 20 W in class-A operation at 860 MHz and a supply voltage of 25 V.
BLV859 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 60 | V | |
| VCES | collector-emitter voltage | open base | 28 | V | |
| VEBO | emitter-base voltage | open collector | 2.5 | V | |
| IC | collector current(DC) | 15 | A | ||
| IC(AV) | average collector current | 15 | A | ||
| Ptot | total power dissipation | Tmb =70 °C; note 1; see Fig.2 | 145 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV859 Features
* Double internal input and output matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV859 Typical Application
* Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.
BLV859 Connection Diagram
BLV861 General Description
NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.
BLV861 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 65 | V | |
| VCES | collector-emitter voltage | open base | 30 | V | |
| VEBO | emitter-base voltage | open collector | 3 | V | |
| IC | collector current(DC) | 15 | A | ||
| Ptot | total power dissipation | Tmb =70 °C; note 1; see Fig.2 | 220 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV861 Features
* Double stage internal input and output matching networks for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV861 Typical Application
* Common emitter class-AB output stages of television transmitter amplifiers (sound and vision) operating in bands 4 and 5 (470 to 860 MHz).
BLV861 Connection Diagram
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