BLV75/12, BLV80/28, BLV857 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:TO-57 D/C:08+/09+
BLV75/12, BLV80/28, BLV857 Datasheet download
Part Number: BLV75/12
MFG: PHILIPS
Package Cooled: TO-57
D/C: 08+/09+
BLV75/12, BLV80/28, BLV857
- Table of contents:
Info of BLV75/12
Info of BLV80/28
Info of BLV857
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About BLV75/12
PDF/DataSheet Download
Datasheet: BLV75/12
File Size: 73126 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV10
PDF/DataSheet Download
Datasheet: BLV10
File Size: 83514 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLV857
PDF/DataSheet Download
Datasheet: BLV857
File Size: 142130 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV75/12 General Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.
BLV75/12 Maximum Ratings
| Collector-base voltage (open emitter)peak value | VCBSM | max. | 36v | ||
| Collector-emitter voltage (open base) | Vceo | max. | 16.5v | ||
| Emitter-base voltage (open collector) | Vebo | max. | 4v | ||
| Collector current | |||||
| d.c. or average | IC | max. | 15 A | ||
| (peak value); f > 1 MHz | ICM | max. | 45 A | ||
| Total power dissipation | |||||
| f > 1 MHz; Tmb = 25 °C | Ptot (r.f.) | max. | 150 W | ||
| Storage temperature | Tstg | -65 to , 150 °C | |||
| Operating junction temperature | Tj | max. | 200 °C | ||
BLV75/12 Features
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain
BLV75/12 Connection Diagram
BLV857 General Description
NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap. The common emitters are connected to the flange.
BLV857 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 60 | V | |
| VCES | collector-emitter voltage | open base | 28 | V | |
| VEBO | emitter-base voltage | open collector | 2.5 | V | |
| IC | collector current(DC) | 7.4 | A | ||
| IC(AV) | average collector current | 7.4 | A | ||
| Ptot | total power dissipation | Tmb =70 °C; note 1; see Fig.2 | 80 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV857 Features
* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability.
BLV857 Typical Application
Common emitter class-A operation in linear transposers/transmitters (television) in the 470 to 860 MHz frequency band.
BLV857 Connection Diagram
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