BLV31, BLV32F, BLV33 Selling Leads, Datasheet
MFG:PHILIPS D/C:08+/09+
BLV31, BLV32F, BLV33 Datasheet download
Part Number: BLV31
MFG: PHILIPS
Package Cooled:
D/C: 08+/09+
BLV31, BLV32F, BLV33
- Table of contents:
Info of BLV31
Info of BLV32F
Info of BLV33
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About BLV31
PDF/DataSheet Download
Datasheet: BLV31
File Size: 15225 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
About BLV32F
PDF/DataSheet Download
Datasheet: BLV32F
File Size: 19441 KB
Manufacturer: ASI [Advanced Semiconductor]
Download : Click here to Download
About BLV33
PDF/DataSheet Download
Datasheet: BLV33
File Size: 133193 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLV31 General Description
The ASI BLV31 is Designed for use in VHF amplifiers
BLV31 Maximum Ratings
| IC | 3 A | ||||
| VCB | 60 V | ||||
| PDISS | 48 W @ T = 25 | ||||
| TJ | -65 to +200 | ||||
| TSTG | -65 to +150 | ||||
| JC | 3.5 /W | ||||
BLV31 Features
* PG = 16.5 dB Typical at 224 MHz
* Omnigold(TM) Metallization System
* Omnigold(TM) Metallization System
BLV32F General Description
The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters.
BLV32F Maximum Ratings
| IC | 4.2A | ||||
| VCBO | 60 V | ||||
| VCEO | 32 V | ||||
| VEBO | 4.0 V | ||||
| PDISS | 15.9 W @ T = 25 | ||||
| TJ | -65 to +200 | ||||
| TSTG | -65 to +150 | ||||
| JC | 10 /W | ||||
BLV32F Features
* Diffused emitter ballasting resistors
* PG = 16 dB at 10 W/224 MHz
* Omnigold(TM) Metalization System
* PG = 16 dB at 10 W/224 MHz
* Omnigold(TM) Metalization System
BLV33 General Description
NPN silicon planar epitaxial transistor encapsulated in a 1/16" 4 fslead SOT147 capstan package with ceramic cap. All leads are isolated from the stud.
BLV33 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 65 | V | |
| VCES | collector-emitter voltage | open base | 33 | V | |
| VEBO | emitter-base voltage | open collector | 4 | V | |
| IC | collector current | 12.5 | A | ||
| IC(AV) | collector current | 12.5 | A | ||
| ICM | collector current | f > 1 MHz | 20 | A | |
| Ptot | total power dissipation | f > 1 MHz;Ts = 103 °C (note 1) |
165 | W | |
| Tstg | storage temperature | -65 | +150 | ||
| Tj | operating junction temperature | 200 |
BLV33 Features
* Diffused emitter ballasting resistors for an optimum temperature profile
* Gold sandwich metallization ensures excellent reliability.
* Gold sandwich metallization ensures excellent reliability.
BLV33 Typical Application
* Primarily intended for use in linear VHF amplifiers for television transmitters and transposers.
BLV33 Connection Diagram
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