BLS3135-50L, BLS3135-50L734, BLS3135-65 Selling Leads, Datasheet
MFG:NXP Package Cooled:Standard D/C:08+
BLS3135-50L, BLS3135-50L734, BLS3135-65 Datasheet download
Part Number: BLS3135-50L
MFG: NXP
Package Cooled: Standard
D/C: 08+
BLS3135-50L, BLS3135-50L734, BLS3135-65
- Table of contents:
Info of BLS3135-50L
Info of BLS3135-50L734
Info of BLS3135-65
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About BLS1
PDF/DataSheet Download
Datasheet: BLS1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About BLS1
PDF/DataSheet Download
Datasheet: BLS1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About BLS3135-65
PDF/DataSheet Download
Datasheet: BLS3135-65
File Size: 70428 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BLS3135-65 General Description
NPNsiliconplanarepitaxialmicrowavepowertransistorin a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange.
BLS3135-65 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 75 | V | |
| VCES | collector-emitter voltage | RBE = 0 | 75 | V | |
| VEBO | emitter-base voltage | open collector | 2 | V | |
| ICM | peak collector current | tp 100 us; 10% | 8 | A | |
| Ptot | total power dissipation | tp = 100 us; = 10%; Tmb = 25 | 200 | W | |
| Tstg | storage temperature | -65 | 200 | ||
| Tj | operating junction temperature | 200 | |||
| Tsld | soldering temperature | up to 0.2 mm from ceramic cap; t 10 s | 235 |
BLS3135-65 Features
* Suitable for short and medium pulse applications
* Internalinputandoutputmatchingnetworksforaneasy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicellgeometryimprovespowersharingandreduces thermal resistance.
* Internalinputandoutputmatchingnetworksforaneasy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicellgeometryimprovespowersharingandreduces thermal resistance.
BLS3135-65 Typical Application
* Commonbaseclass-Cpulsedpoweramplifiersforradar applications in the 3.1 to 3.5 GHz band.
BLS3135-65 Connection Diagram
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