BLS2731-50, BLS2731-50TRAY45, BLS2933-100 Selling Leads, Datasheet
MFG:BL Package Cooled:N/A D/C:N/A
BLS2731-50, BLS2731-50TRAY45, BLS2933-100 Datasheet download
Part Number: BLS2731-50
MFG: BL
Package Cooled: N/A
D/C: N/A
BLS2731-50, BLS2731-50TRAY45, BLS2933-100
- Table of contents:
Info of BLS2731-50
Info of BLS2731-50TRAY45
Info of BLS2933-100
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About BLS2731-50
PDF/DataSheet Download
Datasheet: BLS2731-50
File Size: 70466 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About BLS1
PDF/DataSheet Download
Datasheet: BLS1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
About BLS1
PDF/DataSheet Download
Datasheet: BLS1
File Size: 38100 KB
Manufacturer: LITTELFUSE [Littelfuse]
Download : Click here to Download
BLS2731-50 General Description
NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the common base connected to the flange.
BLS2731-50 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | 75 | V | |
| VCES | collector-emitter voltage | RBE = 0 | 75 | V | |
| VEBO | emitter-base voltage | open collector | 2 | V | |
| ICM | peak collector current | tp 100 us; 10% | 6 | A | |
| Ptot | total power dissipation | tp = 100 us; = 10%; Tmb = 25 | 80 | W | |
| Tstg | storage temperature | -65 | 200 | ||
| Tj | operating junction temperature | 200 | |||
| Tsld | soldering temperature | up to 0.2 mm from ceramic cap; t 10 s | 235 |
BLS2731-50 Features
* Suitable for short and medium pulse applications
* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell geometry improves power sharing and reduces thermal resistance.
* Internal input and output matching networks for an easy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicell geometry improves power sharing and reduces thermal resistance.
BLS2731-50 Typical Application
* Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.
BLS2731-50 Connection Diagram
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