Features: * Suitable for short and medium pulse applications* Internalinputandoutputmatchingnetworksforaneasy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallization ensures excellent reliability* Interdigitated emitter-base structure provides high emitter efficiency* M...
BLS3135-10: Features: * Suitable for short and medium pulse applications* Internalinputandoutputmatchingnetworksforaneasy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallization ensu...
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SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | 75 | V | |
VCES | collector-emitter voltage | RBE = 0 | 75 | V | |
VEBO | emitter-base voltage | open collector | 2 | V | |
ICM | peak collector current | tp 100 us; 10% | 1.5 | A | |
Ptot | total power dissipation | tp = 100 us; = 10%; Th = 25 | 145 | W | |
Tstg | storage temperature | -65 | 200 | ||
Tj | operating junction temperature | 200 | |||
Tsld | soldering temperature | up to 0.2 mm from ceramic cap; t 10 s | 235 |