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BLS3135-10

Features: * Suitable for short and medium pulse applications* Internalinputandoutputmatchingnetworksforaneasy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallization ensures excellent reliability* Interdigitated emitter-base structure provides high emitter efficiency* M...

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BLS3135-10: Features: * Suitable for short and medium pulse applications* Internalinputandoutputmatchingnetworksforaneasy circuit design* Emitter ballasting resistors improve ruggedness* Gold metallization ensu...

BLS3135-10 Data Sheet

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Part Number:
BLS3135-10
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/13

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Product Details

Description



Features:

* Suitable for short and medium pulse applications
* Internalinputandoutputmatchingnetworksforaneasy circuit design
* Emitter ballasting resistors improve ruggedness
* Gold metallization ensures excellent reliability
* Interdigitated emitter-base structure provides high emitter efficiency
* Multicellgeometryimprovespowersharingandreduces thermal resistance.


Application

* Commonbase class-C pulsedpower amplifier forradar applications in the 3.1 to 3.5 GHz range.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 75 V
VCES collector-emitter voltage RBE = 0  75 V
VEBO emitter-base voltage open collector 2 V
ICM peak collector current tp  100 us; 10% 1.5 A
Ptot total power dissipation tp = 100 us;   = 10%; Th = 25  145 W
Tstg storage temperature -65 200
Tj operating junction temperature 200
Tsld soldering temperature up to 0.2 mm from ceramic cap; t 10 s 235



Description

NPNsili conplan are pitaxial microwave power transistorin BLS3135-10 a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange.


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