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Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.
BLL1214-35 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
75
V
VGS
gate-source voltage
−
±15
V
Ptot
total power dissipation
under RF conditions; Th 25 °C
−
110
W
Tstg
storage temperature
−65
+150
Tj
junction temperature
−
200
BLL1214-35 Features
• High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators,reducing common mode inductance.
BLL1214-35 Typical Application
• L-band radar applications in the 1200 to 1400 MHz frequency range.