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BLL1214-150L, BLL1214-250, BLL1214-250112

BLL1214-150L, BLL1214-250, BLL1214-250112 Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:SOT-502A  D/C:06

BLL1214-150L, BLL1214-250, BLL1214-250112 Picture

BLL1214-150L, BLL1214-250, BLL1214-250112 Datasheet download

Five Points

Part Number: BLL1214-150L

 

MFG: PHILIPS

Package Cooled: SOT-502A

D/C: 06

 

 

 
 
 
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About BLL1214-250

PDF/DataSheet Download

Datasheet: BLL1214-250

File Size: 81208 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BLL1214-250 Suppliers

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About BLL1214-250

PDF/DataSheet Download

Datasheet: BLL1214-250

File Size: 81208 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BLL1214-250112 Suppliers

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About BLL1214-250

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Datasheet: BLL1214-250

File Size: 81208 KB

Manufacturer: PHILIPS [Philips Semiconductors]

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BLL1214-250 General Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap. The common source is connected to the flange.

BLL1214-250 Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   75 V
VGS gate-source voltage   ±22 V
Ptot total power dissipation Th 70 °C; tp = 1 ms; = 10% 400 W
Tstg storage temperature   −65 150
Tj junction temperature   200

BLL1214-250 Features

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.

BLL1214-250 Typical Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.

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