Position: Home  > All Categories> Integrated Circuits (ICs) > BLL1214-35

BLL1214-35

Transistors RF MOSFET Power BULK TNS-MICP

product image

BLL1214-35 Picture
See larger image
SeekIC No. : 00220600 Detail

BLL1214-35: Transistors RF MOSFET Power BULK TNS-MICP

BLL1214-35 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
BLL1214-35
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Configuration : Single Transistor Polarity : N-Channel
Frequency : 1.2 GHz to 1.4 GHz Gain : 13 dB
Output Power : 35 W Drain-Source Breakdown Voltage : 75 V
Continuous Drain Current : 10 A Gate-Source Breakdown Voltage : +/- 15 V
Maximum Operating Temperature : + 150 C Package / Case : SOT-467C
Packaging : Reel    

Description

Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Gain : 13 dB
Package / Case : SOT-467C
Output Power : 35 W
Frequency : 1.2 GHz to 1.4 GHz
Continuous Drain Current : 10 A
Drain-Source Breakdown Voltage : 75 V


Features:

• High power gain
• Easy power control
• Excellent ruggedness
• Source on mounting base eliminates DC isolators,reducing common mode inductance.


Application

• L-band radar applications in the 1200 to 1400 MHz frequency range.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage   − 75 V
VGS gate-source voltage   − ±15 V
Ptot total power dissipation under RF conditions; Th 25 °C − 110 W
Tstg storage temperature   −65 +150
Tj junction temperature   − 200



Description

Silicon N-channel enhancement mode lateral D-MOS transistor BLL1214-35 encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the flange.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Prototyping Products
AVT4168
DE1
Tools
TCP202
G084SN05 V.3
RF and RFID
X3C26P1-30S
1P620S
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more