BFT24, BFT243, BFT25 Selling Leads, Datasheet
MFG:PHI Package Cooled:SOT-37 D/C:94
MFG:PHI Package Cooled:SOT-37 D/C:94
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PDF/DataSheet Download
Datasheet: BFT12
File Size: 90337 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFT12
File Size: 90337 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFT25
File Size: 62458 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
NPN transistor in a plastic SOT23 envelope.
It is primarily intended for use in RF low power amplifiers, such as in pocket phones, paging systems, etc. The transistor features low current consumption (100 µA to 1 mA); due to its high transition frequency, it also has excellent wideband properties and low noise up to high frequencies.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VCBO | collector-base voltage | open emitter | − | 8 | V |
VCEO | collector-emitter voltage | open base | − | 5 | V |
VEBO | emitter-base voltage | open collector | − | 2 | V |
IC | collector current (DC) | − | 6.5 | mA | |
ICM | peak collector current | f > 1 MHz | − | 10 | mA |
Ptot | total power dissipation | up to Ts = 167 °C; note 1 | − | 30 | mW |
Tstg | storage temperature | −65 | 150 | ||
Tj | junction temperature | − | 175 |
Note
1. Ts is the temperature at the soldering point of the collector tab.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these roducts can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.