MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:Sot-343 D/C:09+
BFP650, BFP67, BFP67-GS08 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: Sot-343
D/C: 09+
Description: TRANS NPN RF 4V 150MA SOT-343
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PDF/DataSheet Download
Datasheet: BFP650
File Size: 214832 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP67
File Size: 213931 KB
Manufacturer: VISAY [Vishay Siliconix]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
| Technical/Catalog Information | BFP650 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 37GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.9dB @ 1.8GHz ~ 6GHz |
| Current - Collector (Ic) (Max) | 150mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 80mA, 3V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4V |
| Gain | 21.5dB ~ 10.5dB |
| Power - Max | 500mW |
| Compression Point (P1dB) | 18dBm |
| Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BFP650 BFP650 |
| Parameter |
Symbol |
Value |
Unit |
| Collector-emitter voltage |
VCEO |
4 |
V |
| Collector-emitter voltage |
VCES |
13 | |
| Collector-base voltage |
VCBO |
13 | |
| Emitter-base voltage |
VEBO |
1.2 | |
| Collector current |
IC |
150 |
mA |
| Base current |
IB |
10 | |
| Total power dissipation1) TS 75°C |
Ptot |
500 |
W |
| Junction temperature |
Tj |
150 |
°C |
| Ambient temperature |
TA |
-65 ... 150 | |
| Storage temperature |
Tstg |
-65 ... 150 | |
| Thermal Resistance | |||
| Parameter |
Symbol |
Value |
Unit |
| Junction - soldering point2) |
RthJS |
140 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology
|
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
| Collector-base voltage |
VCBO |
20 |
V | |
| Collector-emitter voltage |
VCEO |
10 |
V | |
| Emitter-base voltage |
VEBO |
2.5 |
V | |
| Collector current |
IG |
50 |
mA | |
| Total power dissipation |
Tamb 60 |
Ptot |
200 |
mW |
| Junction temperature |
Tj |
150 |
||
| Storage temperature range |
Tstg |
65 to +150 |
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