MFG:INFINEON Package Cooled:SOT343 D/C:06+
BFP181WE6327, BFP182 E7764, BFP182 E7764 Q62702F1396 Datasheet download
MFG: INFINEON
Package Cooled: SOT343
D/C: 06+
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PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
BFP182 E7764 is a type of NPN silicon RF transistor which has two unique features: (1)For low noise,high-gain amplifiers at collector currents from 1 mA to 2 mA;(2)fT is 8GHz and F is 1.3dB at 900MHz.
There are some maximum ratings about it.Collector-emitter voltage(VCEO) is 12 V.Collector-base voltage(VCBO) is 20 V.Emitter-base voltage(VEBO) is 2 V.Collector current(IC) is 35 mA.Base current(IB) is 4 mA.Total power dissipation(Ptot,TS is not higher than 69°C) is 250 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.
Besides,there are some electrical characteristics at TA = 25°C, unless otherwise specified.DC characteristics: Collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 12 V min.Collector-base cutoff current(ICBO,VCEB = 10 V, Ie = 0) is 100 nA max.Emitter-base cutoff current(IEBO,VEB = 1V, IC = 0) is 1A max.DC current gain(hFE,Ic is 10 mA , Vce is 8 V) is 50 min,100 typ and 200 max.
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