Features: · For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz· F = 2.1 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 1...
BFP 180W: Features: · For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA fT = 7 GHz· F = 2.1 dB at 900 MHzSpecifications Parameter Symbol Va...
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Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
· For low-power amplifier in mobile communication systems (pager) at collector currents from 0.2 mA to 2.5 mA
fT = 7 GHz
· F = 2.1 dB at 900 MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
8 |
V |
Collector-emitter voltage |
VCES |
10 | |
Collector-base voltage |
VCBO |
10 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
4 |
mA |
Base current |
IB |
0.5 | |
Total power dissipation1) TS 126°C |
Ptot |
30 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point2) |
RthJS |
785 |
K/W |