Features: · For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.45 dB at 900 MHzSpecifications Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-bas...
BFP 181W: Features: · For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA· fT = 8 GHz F = 1.45 dB at 900 MHzSpecifications Parameter Symbol Value Unit Coll...
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Transistors RF Bipolar Small Signal NPN Silicon RF TRANSISTOR
· For low noise, high-gain broadband amplifier at collector currents from 0.5 mA to 12 mA
· fT = 8 GHz
F = 1.45 dB at 900 MHz
Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage |
VCEO |
12 |
V |
Collector-emitter voltage |
VCES |
20 | |
Collector-base voltage |
VCBO |
20 | |
Emitter-base voltage |
VEBO |
2 | |
Collector current |
IC |
20 |
mA |
Base current |
IB |
2 | |
Total power dissipation1) TS 91°C |
Ptot |
175 |
W |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 | |
Thermal Resistance | |||
Parameter |
Symbol |
Value |
Unit |
Junction - soldering point2) |
RthJS |
340 |
K/W |
1TS is measured on the collector lead at the soldering point to the pcb