BFP620FE7764, BFP620L6327, BFP640 Selling Leads, Datasheet
MFG:INFINEON Package Cooled:TSFP-4 D/C:0
BFP620FE7764, BFP620L6327, BFP640 Datasheet download
Part Number: BFP620FE7764
MFG: INFINEON
Package Cooled: TSFP-4
D/C: 0
MFG:INFINEON Package Cooled:TSFP-4 D/C:0
BFP620FE7764, BFP620L6327, BFP640 Datasheet download
MFG: INFINEON
Package Cooled: TSFP-4
D/C: 0
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Datasheet: BFP620FE7764
File Size: 200669 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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PDF/DataSheet Download
Datasheet: BFP640
File Size: 279409 KB
Manufacturer: INFINEON [Infineon Technologies AG]
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Parameter |
Symbol |
Value |
Unit |
Collector-emitter voltage TA > 0 °C |
VCEO |
4 |
V |
TA 0 °C |
3.7 | ||
Collector-emitter voltage |
VCES |
13 | |
Collector-base voltage |
VCBO |
13 | |
Emitter-base voltage |
VEBO |
1.2 | |
Collector current |
IC |
50 |
mA |
Base current |
IB |
3 | |
Total power dissipation1) TS 90°C |
Ptot |
200 |
mW |
Junction temperature |
Tj |
150 |
°C |
Ambient temperature |
TA |
-65 ... 150 | |
Storage temperature |
Tstg |
-65 ... 150 |
1TS is measured on the collector lead at the soldering point to the pcb
• High gain low noise RF transistor
• Provides outstanding performance for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology