MFG:Infineon Technologies Category:Discrete Semiconductor Products Package Cooled:SOT343-AM PB-FREE D/C:09+
BFP420 E6327, BFP420/AM, BFP420E6327 Datasheet download
Category: Discrete Semiconductor Products
MFG: Infineon Technologies
Package Cooled: SOT343-AM PB-FREE
D/C: 09+
Description: TRANS NPN RF 4.5V SOT-343
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PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BFP136
File Size: 81088 KB
Manufacturer: INFINEON [Infineon Technologies AG]
Download : Click here to Download
The BFP420 E6327 is a type of NPN silicon RF transistor which has many unique features: (1)For high gain low noise amplifiers;(2)For oscillators up to 10 GHz;(3)Noise figure F is 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz;(4)transition frequency fT is 25 GHz;(5)Gold metalization for high reliability,etc.
There are some maximum ratings about it.Collector-emitter voltage(VCEO) is 4.5 V.Collector-base voltage(VCBO) is 15 V.Emitter-base voltage(VEBO) is 1.5 V.Collector current(IC) is 35 mA.Base current(IB) is 3 mA.Total power dissipation(Ptot,TS is not higher than 75°C) is 160 mW.Junction temperature(Tj) is 150°C.Ambient temperature(TA) is -65°C to 150°C.Storage temperature(Tstg) is -65°C to 150°C.
Besides,there are some DC characteristics at TA = 25°C, unless otherwise specified.(1)collector-emitter breakdown voltage(V(BR)CEO,IC = 1 mA, IB = 0) is 4.5 V min,5 V typ and 6.5 V max.(2)collector-base cutoff current(ICBO,VEB = 0.5 V, Ic = 0) is 200 nA max.(3)emitter-base cutoff current(IEBO,VEB = 0.5 V, IC = 0) is 35 A max.(4)DC current gain(hFE,Ic is 40 mA , Vce is 3 V) is 50 min,80 typ and 150 max.
| Technical/Catalog Information | BFP420E6327 |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 1.1dB @ 1.8GHz |
| Current - Collector (Ic) (Max) | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 4V |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Gain | 21dB |
| Power - Max | 160mW |
| Compression Point (P1dB) | 12dBm |
| Package / Case | SC-70-4, SC-82AB, SOT-323-4, SOT-343 |
| Packaging | Tape & Reel (TR) |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BFP420E6327 BFP420E6327 BFP420INTR ND BFP420INTRND BFP420INTR |
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