BFE505, BFE520, BFFA Selling Leads, Datasheet
MFG:PHI Package Cooled:SOT-353 D/C:04+
BFE505, BFE520, BFFA Datasheet download
Part Number: BFE505
MFG: PHI
Package Cooled: SOT-353
D/C: 04+
MFG:PHI Package Cooled:SOT-353 D/C:04+
BFE505, BFE520, BFFA Datasheet download
MFG: PHI
Package Cooled: SOT-353
D/C: 04+
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Datasheet: BFE505
File Size: 60612 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Datasheet: BFE520
File Size: 60705 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Any single transistor | |||||
VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
IC | DC collector current |
- |
18 |
mA | |
Ptot | total power dissipation |
up to Ts = 118 °C; note 1 |
- |
500 |
mW |
Tstg | storage temperature |
-65 |
+175 |
°C | |
Tj | junction temperature |
- |
175 |
°C |
· Small size
· High power gain at low bias current and voltage
· Temperature matched
· Balanced configuration
· hFE matched
· Continues to operate at VCE < 1 V.
Emitter coupled dual NPN silicon RF transistor in a surface mount 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, pagers and satellite TV-tuners.
SYMBOL | PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
Any single transistor | |||||
VCBO | collector-base voltage |
open emitter |
- |
20 |
V |
VCEO | collector-emitter voltage |
open base |
- |
8 |
V |
VEBO | emitter-base voltage |
open collector |
- |
2.5 |
V |
IC | DC collector current |
- |
70 |
mA | |
Ptot | total power dissipation |
up to Ts = 118 °C; note 1 |
- |
1 |
W |
Tstg | storage temperature |
-65 |
+175 |
°C | |
Tj | junction temperature |
- |
175 |
°C |