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Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Operating junction temperature range
Tj
-65 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
Lead temperature 3.2 mm from case for 10 seconds
TL
260
°C
BDV65A Features
Designed for Complementary Use with BDV64, BDV64A, BDV64B and BDV64C 125 W at 25°C Case Temperature 12 A Continuous Collector Current Minimum hFE of 1000 at 4 V, 5 A
BDV65B Parameters
Technical/Catalog Information
BDV65B
Vendor
ON Semiconductor
Category
Discrete Semiconductor Products
Transistor Type
NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
10A
Power - Max
125W
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A, 4V
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 5A
Frequency - Transition
-
Current - Collector Cutoff (Max)
1mA
Mounting Type
Through Hole
Package / Case
SOT-93, TO-218 (Straight Leads)
Packaging
Tube
Drawing Number
*
Lead Free Status
Contains Lead
RoHS Status
RoHS Non-Compliant
Other Names
BDV65B BDV65B
BDV65B Maximum Ratings
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
100
Vdc
CollectorBase Voltage
VCBO
100
Vdc
Emitter-Base Voltage
VEB
5.0
Vdc
Collector Current - Continuous - Peak
IC
10 20
Adc
Base Current
IB
0.5
Vdc
Total Device Dissipation @ TC = 25 Derate above 25
PD
125 1.0
Watt mW/
Operating and Storage Junction Temperarture Range
TJ:TSTG
55 to +150
BDV65B Typical Application
* High DC Current Gain HFE = 1000 (min.) @ 5 Adc * Monolithic Construction with Builtin Base Emitter Shunt Resistors