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BDV6B

Application* High DC Current Gain HFE = 1000 (min.) @ 5 Adc* Monolithic Construction with Builtin Base Emitter Shunt ResistorsSpecifications Rating Symbol Value Unit CollectorEmitter Voltage VCEO 100 Vdc CollectorBase Voltage VCBO 100 Vdc Emitter-Base Voltage VE...

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BDV6B: Application* High DC Current Gain HFE = 1000 (min.) @ 5 Adc* Monolithic Construction with Builtin Base Emitter Shunt ResistorsSpecifications Rating Symbol Value Unit CollectorEmitter ...

BDV6B Data Sheet

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Part Number:
BDV6B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Application

* High DC Current Gain
   HFE = 1000 (min.) @ 5 Adc
* Monolithic Construction with Builtin Base Emitter Shunt Resistors


Specifications

Rating Symbol
Value
Unit
CollectorEmitter Voltage VCEO

100
Vdc
CollectorBase Voltage VCBO
100
Vdc
Emitter-Base Voltage VEB
5.0
Vdc
Collector Current - Continuous
                            - Peak		 IC
10
20
Adc
Base Current IB
0.5
Vdc
Total Device Dissipation @ TC = 25
Derate above 25		 PD
125
1.0
Watt
mW/
Operating and Storage Junction
Temperarture Range		 TJ:TSTG
55 to +150



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